Development of Short Gate Fet's

Abstract

This project investigated the possibilities of improved performance in the standard GaAs field effect transistor structures. A secondary objective was to determine the extent to which Deep UV Lithography could be used as a technique to produce high resolution geometries. One can now routinely produce . 5 micron gate geometries with Deep UV lithography and occasionally sub .25 micron structures. This technology is used to produce devices with state of the art electrical characteristics. Into the last term of the contract A novel structure will be used to try and increase the output conductance of these devices. The annealing of undoped epitaxial material will also be investigated.

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1985
Accession Number
ADA223886

Entities

People

  • G. L. Harris
  • Michael G. Spencer

Organizations

  • Howard University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alcohols
  • Deep Ultraviolet Lithography
  • Electrical Engineering
  • Elements
  • Fabrication
  • Field Effect Transistors
  • Geometry
  • High Resolution
  • Lithography
  • Materials
  • Metal-Semiconductor Junctions
  • Metals
  • Photolithography
  • Radiation
  • Saturation
  • Semiconductors
  • Standards

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology
  • Systems Analysis and Design