Theory and Practice for Large-Scale Systems
Abstract
A better understanding of the limiting mechanisms in heterojunction transistors is leading to improved devices. Installation of an MBE system will allow production of the first samples in December 1983. Bipolar transistors have been fabricated on recrystallized silicon films for the first time. These are designed to study the properties of the film. A fully self-aligned JCMOS device has been fabricated with partial success. Another three-dimensional device structure, the staggered CMOS device, has been plagued by leaks in the oxide under the recrystallized layer. A high-performance FIR filter has been designed at the logic level, as test bed for retiming and size optimization algorithms. In a related effort, progress has been made on a technique for automatically testing adherence to a design methodology. Among the things checked are threshold drop limits, pullup network topology, information sources and sinks, charge-sharing faults and races. Several improvements to the PI placement and interconnect program have been made, including automatic power/ground routing. The program will receive study at an industrial test site. About a dozen systolic-array transformations have been identified as potentially important to designers. One, retiming, has shown to be computationally feasible. Transformations between two-dimensional and three-dimensional interconnect structures have been derived.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1983
- Accession Number
- ADA223963
Entities
People
- Clifton G. Fonstad
- Dimitri A Antoniadis
- Lance A. Glasser
- Paul Penfield Jr.
- Ronald L. Rivest
Organizations
- Massachusetts Institute of Technology