Research on Mercury Cadmium Telluride

Abstract

This report summarizes work done over a five-year period on a program entitled, Research on Mercury Cadmium Telluride. Using the alloy growth OMVPE process, we have obtained compositional uniformity of 0.005 over a 2 GaAs slice. p-type doping to 10 17/cm3 and n-type doping to 4 x 10 18/cm3 have been achieved using As and In respectively. Annealing studies have shown that the background concentration of undoped HgCdTe is around 5 x 10 14/cm3. Passivation techniques, using anodic sulfidization, have been developed for HgCdTe. Both p-n diodes and field effect transistors have been demonstrated on material grown during the course of this program. A diffusion length of 120 microns has been measured in material with x = 0.3.

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Document Details

Document Type
Technical Report
Publication Date
Jul 09, 1990
Accession Number
ADA224250

Entities

People

  • Ishwara B. Bhat
  • Sorab K. Ghandhi

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Crystals
  • Electrical Properties
  • Electron Mobility
  • Engineering
  • Epitaxial Growth
  • Field Effect Transistors
  • Heat Energy
  • Mass Spectrometry
  • Measurement
  • Military Research
  • New York
  • Scattering
  • Semiconductors
  • Systems Engineering

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology