Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)

Abstract

The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have Ge lattice constants and a (105) facet structure. Results suggest that these clusters provide an easy kinetic path for formation of macroscopic Ge islands. Keywords: Surfaces; Kinetics; Ordering; Growth; Germanium; Silicon.

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Document Details

Document Type
Technical Report
Publication Date
Apr 20, 1990
Accession Number
ADA224324

Entities

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  • B. S. Swartzentruber
  • D. E. Savage
  • M. G. Lagally
  • Y. W. Mo

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  • University of Wisconsin–Madison

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