Microscopic Aspects of the Initial Stages of Epitaxial Growth. A scanning Tunneling Microscopy Study

Abstract

Scanning tunneling microscopy offers the opportunity to investigate growth and ordering processes at the atomic level and hence to identify and distinguish different kinetic and energetic mechanisms that may be operative. A review of the fundamental mechanisms of growth is given. Scanning tunneling microscopy measurements of the ordering and growth of Si on (001) are used to illustrate these mechanisms. Diffusion coefficients, growth anisotropy and lateral accommodation coefficients, equilibrium island shapes and free energies, edge desorption energies, and diffusional anisotropy are discussed. Keywords: Surfaces; Kinetics; Ordering; Growth; STM; Diffusion.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1990
Accession Number
ADA224325

Entities

People

  • B. S. Swartzentruber
  • M. B. Webb
  • M. G. Lagally
  • R. Kariotis
  • Y. W. Mo

Organizations

  • University of Wisconsin–Madison

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Classification
  • Diffusion Coefficient
  • Epitaxial Growth
  • Equations Of State
  • Heat Energy
  • Materials
  • Materials Science
  • Measurement
  • Military Research
  • Phase Diagrams
  • Phase Transformations
  • Thermodynamics
  • Three Dimensional
  • Transition Temperature
  • Two Dimensional
  • Vapor Pressure

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.