A Comparative Study of Three Commercial Indium Phosphide Substrates

Abstract

A comparative study of the three commercial indium phosphide substrates, CrystaComm, ICI Americas and Sumitomo Electric, was performed using chemical etching techniques. The average dislocation densities were found to be equal to or slightly greater than the values reported by the manufacturers. All three substrates exhibited speckles and unspecified defects with bromine- methanol etching. The unspecified defect densities were similar for all substrates. Small amounts of subsurface was observed on all wafers. The study showed that the three commercial substrates were of comparable defect density. Results of the study indicate that additional research is necessary in order to improve the technology for preparing InP substrates.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1989
Accession Number
ADA224487

Entities

People

  • Kenneth P. Quinlan

Organizations

  • Rome Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Acids
  • Air Force
  • Alcohols
  • Bipolar Junction Transistors
  • Bromine
  • Bromine Compounds
  • Chemical Etching
  • Crystal Growth
  • Crystals
  • Dislocations
  • Etching
  • Methanols
  • Semiconductors
  • Standards
  • Steady State
  • Substrates

Fields of Study

  • Materials science

Readers

  • Industrial Economics
  • Semiconductor Device Technology
  • Structural Health Monitoring of Composite Structures.