Semiconductor Engineering for High-Speed Devices

Abstract

This report summarizes major accomplishments covering the period 15 March to 13 June. A paper entitled 'Velocity Field Characteristics of III-V semiconductor Alloys,' which was submitted to the Journal of Applied Physics is attached as Appendix A. Our aim in this period has been to expand the work to study the effect of ionized impurity scattering and strain scattering on the electron mobility. The modified electron mobility will, in turn, affect velocity-field (v-E) characteristics in semiconductors and their alloys. Ionized impurity scattering is treated in a second order perturbation theory. Our improvement over previous theories is to convert the usual integration over a parabolic energy band to a general Brillioun Zone (BZ) integration. This conversion allows us to incorporate the effect of realistic band structures into this transport calculation.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1988
Accession Number
ADA224565

Entities

People

  • A. Sher
  • A.-b. Chen
  • Siddhartha Krishnamurthy

Organizations

  • SRI International

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Crystal Lattices
  • Electron Density
  • Electron Energy
  • Electron Mobility
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Energy
  • Energy Bands
  • Group Velocity
  • Mobility
  • Scattering
  • Semiconductors
  • Stratified Fluids

Fields of Study

  • Materials science

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics