Ultrafast Physics in Microstructure and Alloy Systems
Abstract
This technical report summarizes the physics underlying ultrafast transient phenomena that occur in the semiconductor microstructures. (1) Nonequilibrium phonon effects on the energy relaxation and lifetime of photogenerated carriers in GaAs MQW; (2) Dependence of electron temperature on well width in AIInAs/GaInAs single quantum well; (3) Determination of band offsets in semiconductor heterolayer via optical transitions in ultrathin quantum wells; (4) Photogenerated of high-density electron-hole plasma energy relaxation and rapid expansion in CdSe; (5) Ultrafast photoluminescence kinetics from the magnetic semiconductor CdCrSe excited by femtosecond laser pulse; (6) Physics in semiconductor GaAs and GaSe under picosecond laser-driven shock-wave compression; (7) Optical transition and recombination lifetime in quasi-zero dimensional electron system in CdS(x)Se(1-x); (8) Picosecond dynamics of exciton dissociation by neutral carbon acceptors in GaAs quantum wells; (9) Determination of I-X mixing effects on the escape time of electrons in resonant state of GaAs/AlGaAs double-barrier tunneling structures; (10) Determination of intervalley X sub 6 - Gamma sub 6 scattering time in GaAs by picosecond pump- probe infrared absorption spectroscopy; (11) Determination of the effective mass and energy minimum of the X7 satellite conduction band of GaAs; (12) Gamma-L intervalley scattering rates in GaAs measured by femtosecond time-resolved four- wave mixing spectroscopy; (13) Hole dynamics in GaAs epilayer grown on Si substrate; (14) Electron dynamics in GaAs multiple quantum wells on Si.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 29, 1990
- Accession Number
- ADA224762
Entities
People
- Kai Shum
- Robert Alfano
Organizations
- City College of New York