MOCVD Comparison by EER

Abstract

Included are results (X, gamma and theta) vs. depth from EER analysis. Graphic figures of gamma and theta vs. depth have been added to the R. S.R.E. report to permit one-to-one comparison of the results. Summary: (1) Both epilayers appear graded throughout with an interface region of 1.5 to 2 microns. (2) Both appear p-type (theta approximately = pi) with the R.S.R.E. being well defined and the NVL sample lapsing to n-type regions during the depth profile. (3) Both exhibit law defect density (gamma <100meV) rapidly increasing at the interface. Conclusions: (1) Insufficient control of growth parameters. (2) In view of widely varying composition the invariance of the carrier concentration provides an important clue. It implies a high impurities content and strong compensation rendering the carrier concentration essentially independent from composition. (3) This result shows that the relatively low mobility of these materials in probably due to impurities scattering and not to defect scattering.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1983
Accession Number
ADA224827

Entities

People

  • Paul M. Raccah

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Compensation
  • Crystal Structure
  • Electron Holes
  • Illinois
  • Impurities
  • Invariance
  • Low Density
  • Materials
  • Mobility
  • Personality
  • Scattering
  • Single Crystals
  • Structural Integrity
  • United States
  • United States Government

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Statistical inference.