An X-Ray Diffraction System for Evaluating the Epitaxial Growth of III-V Alloy Semiconductors

Abstract

The purpose ot this grant was the acquisition of an X-ray diffractometer system for use in evaluating the heteroepitaxial growth of III-V semiconductor compounds and alloys. The diffraction data permit a determination of the lattice constant mismatch between the single crystal substrate and the epilayer. Keywords: Semiconductors, X-Ray diffraction, Epitaxial growth.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1984
Accession Number
ADA224904

Entities

People

  • W. J. Collis

Organizations

  • North Carolina Agricultural and Technical State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Acquisition
  • Air Force
  • Chemical Vapor Deposition
  • Crystals
  • Data Acquisition
  • Diffraction
  • Electrical Engineering
  • Engineering
  • Epitaxial Growth
  • Materials
  • Mechanical Engineering
  • Semiconductors
  • Single Crystals
  • Vapor Deposition
  • X Ray Tubes
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Life Cycle Cost Analysis
  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics