Ammonia Chemisorption on Gallium Arsenide Clusters

Abstract

Gallium arsenide clusters in the 6-16 atom size range were generated by laser vaporization in a supersonic nozzle and trapped as positive ions in Fourier transform ion-cyclotron resonance mass spectrometer. Measurements of the rate of attachment of ammonia revealed that all clusters larger than seven atoms were most reactive near the 1/1 composition ratio of gallium/arsenic. The results suggest that even at this small size the clusters begin to adopt the alternating gallium/arsenic bonding arrangement characteristic of bulk GaAs crystal surfaces where gallium-arsenic bonding activates gallium atoms for ammonia chemisorption. Keywords: Surface chemistry; Ammonia chemisorption; Gallium arsenide clusters; Reprints.

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Document Details

Document Type
Technical Report
Publication Date
Jul 23, 1990
Accession Number
ADA224929

Entities

People

  • F. K. Tittel
  • L. P. Chibante
  • Lihong V. Wang
  • R. E. Smalley
  • R. F. Curl

Organizations

  • Rice University

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Adsorption
  • Band Structures
  • Chemical Composition
  • Chemical Reactions
  • Chemisorption
  • Chemistry
  • Cyclotron Resonance
  • Energy Bands
  • Gallium Arsenides
  • Magnetic Fields
  • Mass Spectra
  • Mass Spectrometers
  • Measurement
  • Military Research
  • Semiconductor Devices
  • Semiconductors
  • Surface Chemistry

Readers

  • Quantum Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Hypersonics
  • Hypersonics - Hypersonic Flight
  • Microelectronics