Laser Annealing of Silicon Clusters

Abstract

Positive silicon cluster ions prepared by laser vaporization in a supersonic beam and trapped in an ion cyclotron resonance cell were probed in chemisorption reactions with ethylene and ammonia. Clusters in the 36-51 atom size range were effectively annealed to unique structural forms by excitation with an XeCl excimer laser followed by cooling through infrared radiation and collisions with argon. Keywords: Surface chemistry; Laser annealing; Silicon clusters; Laser vaporization.

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Document Details

Document Type
Technical Report
Publication Date
Jul 23, 1990
Accession Number
ADA224946

Entities

People

  • Lila R. Anderson
  • Richard E. Smalley
  • Shigeo Maruyama

Organizations

  • Rice University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alkenes
  • Annealing
  • Chemisorption
  • Chemistry
  • Collisions
  • Cyclotron Resonance
  • Ethylenes
  • Excimer Lasers
  • Excitation
  • Infrared Radiation
  • Lasers
  • Mass Spectra
  • Military Research
  • Procurement
  • Radiation
  • Reactivities
  • Surface Chemistry

Fields of Study

  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Powder metallurgy of Titanium alloys.
  • Quantum Chemistry

Technology Areas

  • Directed Energy
  • Hypersonics
  • Hypersonics - Hypersonic Flight