Laser Annealing of Silicon Clusters
Abstract
Positive silicon cluster ions prepared by laser vaporization in a supersonic beam and trapped in an ion cyclotron resonance cell were probed in chemisorption reactions with ethylene and ammonia. Clusters in the 36-51 atom size range were effectively annealed to unique structural forms by excitation with an XeCl excimer laser followed by cooling through infrared radiation and collisions with argon. Keywords: Surface chemistry; Laser annealing; Silicon clusters; Laser vaporization.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 23, 1990
- Accession Number
- ADA224946
Entities
People
- Lila R. Anderson
- Richard E. Smalley
- Shigeo Maruyama
Organizations
- Rice University