Growth and Reactivity of CuCl on Si(111)
Abstract
Films of cuprous chloride (CuCl), a zinc-blende semiconductor lattice-matched to Si, were deposited by molecular beam epitaxy onto a room- temperature Si(111)-7x7 substrate and studied with surface-sensitive spectroscopies. Low-energy electron diffraction revealed an ordered 1x1 pattern at several monolayers coverage and Auger electron spectroscopy yielded an approximate Cu to Cl surface stoichiometry of one-to-one for as-deposited films. Ion scattering experiments indicated that the initial stage of CuCl growth involved Cl-Si bonding. Annealing the films initiated chemical reactions, which resulted in the loss of Cl and the formation of a Cu silicide. (jes)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1990
- Accession Number
- ADA225034
Entities
People
- David K. Shuh
- R. Stanley Williams
- Richard S. Daley
- Robert M. Charatan
Organizations
- University of California, Los Angeles