High Speed Devices Based on Lattice Matched and Pseudomorphically Strained Quantum Wells for Optoelectronic Integrated Circuits

Abstract

The main objectives are to develop InP-based lattice-matched and pseudomorphic quantum well materials using the MBE and MOMBE techniques, study their optical and electro-optic properties, and realize very high-speed external modulators with them. The final stages are to realize OEICs with the lasers and modulators on the same chip. These objectives, will initiated work in the following areas, with both theory and experiments and the results are briefly described. Growth and optical characterization of InGaAs/InAlAs MQW. Electro- optic effect in pseudomorphic InGaAs/InAlAs/InP MQW. Tunneling and recombination times in quantum wells. Broadband matching network for high-frequency modulators.

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1990
Accession Number
ADA225052

Entities

People

  • Pallab K. Bhattacharya

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Absorption Spectra
  • Broadband
  • Chemical Vapor Deposition
  • Electrical Engineering
  • Low Temperature
  • Materials
  • Modulators
  • Optical Properties
  • Optoelectronic Devices
  • Phase Shift
  • Picosecond Time
  • Quantum Wells
  • Refractive Index
  • Spectra
  • Tensile Strain

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing