Growth and Characterization of III-V Epitaxial Films

Abstract

The general subject of this program is that of development of new or adapt existing methods for the preparation, growth and characterization of III - V electronic and optoelectronic materials for MOCVD technique. Investigations will be conducted on the growth of epitaxial layers using organometallic chemical vapor deposition method of selected III - V materials which are potentially useful for photonics and microwave devices. (JES)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1990
Accession Number
ADA225087

Entities

People

  • A. Tripathi
  • J. A. Adamski

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Crystal Growth
  • Crystals
  • Electronics Industry
  • Electronics Laboratories
  • Epitaxial Growth
  • Field Effect Transistors
  • Heat Energy
  • Integrated Circuits
  • Materials
  • Modules (Electronics)
  • Power Electronics
  • Semiconductors
  • Solid State Physics
  • Sulfur Compounds
  • Thermodynamics

Fields of Study

  • Materials science

Readers

  • Business Analytics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene