Synthesis of Large Area, Monocrystalline TiC as a Substrate for Heteroepitaxial Growth of Beta-Sic
Abstract
The purpose of this program was to investigate an alternative method of synthesizing large area TiC monocrystals by a procedure involving multiple chemical vapor deposition (CVD) steps. The proposed method consisted of (a) heteroepitaxial growth of beta-SiC on Si by CBD, (b) gettering of defects in the beta-SiC, and (b) heteroepitaxial growth of TiC on beta-SiC by CVD. Because of numerous technical difficulties, DMI's effort was limited to CVD of beta-SiC on Si. DMI developed a process to etch Si and deposit beta-SiC on Si at a constant temperature of 1300 C without cycling the temperature between etching step and CVD step. Beta-sic was grown using methyltrichlorosilane (CH3SiCl3) without prior carburizing the Si surface. The microstructure of the deposited Beta-SiC film evolved from highly oriented cubic subgrains which coalesced into a smooth, continuous film. (jhd)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 23, 1990
- Accession Number
- ADA225159
Entities
People
- Donald Kupp
- Richard Koba