Plastic Deformation of Highly Doped Silicon
Abstract
Heavily boron doped membranes are shown to be under tensile intrinsic stress with a negative intrinsic bending moment. However, the use of an oxide etch mask during membrane fabrication can alter the state of stress to an apparent compressive state with a positive bending moment. We propose that plastic deformation of the p+ silicon beneath the compressively stressed oxide mask can account for this behavior.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1989
- Accession Number
- ADA225476
Entities
People
- Fariborz Maseeh
- Stephen D. Senturia
Organizations
- Massachusetts Institute of Technology