H-Induced Surface Restructuring on Si(100): Formation of Higher Hydrides
Abstract
H-induced surface structures on Si(100) were studied using temperature programmed desorption (TPD) mass spectroscopy and low energy electron diffraction (LEED). It is shown that the (3x1) phase consists of mainly monohydride and dihydride structures, while the (1x1) phase is composed of a mixture of mono-, di-, and trihydride surface species. The trihydride surface species is associated with the phase transition between the (3x1) and (1x1) surface phases, and liberates SiH4 and beta 3-H2 during thermal desorption, beginning at 200 K. For the fully-saturated Si(100) surface, a saturation surface coverage of 1.9 ML H has been established at a Si(100) adsorption temperature of 210 plus or minus 10 K. These results suggest that the 1.9 ML saturation coverage of H on Si(100) involves the presence of SiH3(a) species, which leads surface involving a uniform siH2(a) overlayer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 10, 1990
- Accession Number
- ADA225499
Entities
People
- C. C. Cheng
- J. T. Yates Jr.
Organizations
- University of Pittsburgh