Development of Short Gate Fet's

Abstract

The primary research objective of this project was to investigate the possibilities of improved performance in the 'standard' GaAs field effect transistor structures. A secondary objective was to determine the extent to which Deep UV Lithography could be used as a technique to produce high resolution geometries. At this point in time we have succeed in the second endeavor and can now routinely produce 0.5 micron gate geometries with Deep UV lithography and occasionally we have produced sub 0.25 micron structures. Using this technology we have produced devices with 'state of the art', electrical characteristics. Toward the end of this reporting period and into the last term of the contract we are investigating a novel structure to try and increase the output conductance of our devices. As an aside we have investigated the annealing of undoped epitaxial material and have obtained some interesting results which are the subject of our first Phd. (rh)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1985
Accession Number
ADA225588

Entities

People

  • G. L. Harris
  • M. G. Spencer

Organizations

  • Howard University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alcohols
  • Chemistry
  • Compound Semiconductors
  • Deep Ultraviolet Lithography
  • Electrical Engineering
  • Electronics Laboratories
  • Field Effect Transistors
  • Integrated Circuits
  • Lithography
  • Materials
  • Metal-Semiconductor Junctions
  • Photolithography
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Transistors

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design
  • Technical Research and Report Writing.