Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials

Abstract

Strained layer GaInAs/GaAs heterostructures for improved high frequency high performance as a result of strained modified valence band structure have been investigated. A new laser structures has been successfully developed which permits direct high frequency modulation of non wire-bonded lasers. The first demonstration of improved microwave frequency bandwidths for lasers has been achieved. Substantial improvement in bandwidth for strained GaInAs quantum well graded index separate confinement heterostructure lasers over unstrained GaAs quantum well lasers has been measured, accompanied by a reduction in threshold current densities for lasing. Strained P-channel MODFETs have been fabricated, but show no significant improvement in high frequency performance. Fundamental materials properties of strained layer GaInAs quantum wells are being investigated and theoretical examination of the properties of strained layer quantum wells are being conducted. (CP)

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Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1989
Accession Number
ADA225695

Entities

People

  • Heonjoon Park
  • Lester F. Eastman
  • S. D. Offsey
  • W. J. Schaff

Organizations

  • Cornell University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Bandwidth
  • Current Density
  • Energy Bands
  • Equations
  • Field Effect Transistors
  • Frequency
  • Frequency Modulation
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Quantum Efficiency
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors
  • Square Roots
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing