The Growth of Epitaxial GaAs and GaA1As on Silicon Substrates by MOVPE
Abstract
The objectives of the programme were to undertake research into the growth of GaAs and AlGaAs on silicon substrates, to refine deposition techniques, and optimise the electrical, optical, and structural properties of the layers; to prepare GaAs/AlGaAs heterostructures on silicon for opto- electronic and microwave devices; and to explore the monolithic integration of III-V devices on silicon CMOS ICs. We have made substantial achievements within the area of materials growth, resulting in the development of a successful process for the MOVPE growth of GaAs onto silicon excellent device results. In the two sections below, our device and materials growth achievements are outlined.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1990
- Accession Number
- ADA225743
Entities
People
- D. J. Stirland
- D. J. Warner
- J. A. Beswick
- P. Kightley
- R. R. Bradley