Investigation of New Semiinsulating Behavior of III-V Compounds.
Abstract
Our investigation of defect interactions and properties related to semi-insulating behavior of IIIV semiconductors resulted in about twenty original publications, six doctoral thesis, one masters thesis and numerous conference presentations. The studies of new compensation mechanisms involving transition metal impurities have defined direct effects associated with deep donor/acceptor levels acting as compensating centers. Electrical and optical properties of vanadium and titanium levels were determined in GaAs, InP and also in ternary compounds InGaAs. The experimental data provided basis for the verification of chemical trends and the VRBE method. They also defined compositional range for III-V mixed crystals whereby semi-insulating behavior can be achieved using transition elements deep levels and a suitable codoping with shallow donor/ acceptor impurities. (jes)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 23, 1990
- Accession Number
- ADA225762
Entities
People
- Jacek Lagowski
Organizations
- Massachusetts Institute of Technology