Research and Development on Advanced Silicon Carbide Thin Film Growth Techniques and Fabrication of High Power and Microwave Frequency Silicon Carbide-Based Device Structures
Abstract
In this reporting period the RF operation of bipolar transistors fabricated from a (6H)-SiC have been theoretically modeled and the dc and RF performance of a MESFET fabricated in a-SiC by Cree Research investigated and improved from the standpoints of parasitic resistances and capacitances as well as device design and fabrication procedures. In addition IMPATT diode structures have been further developed, ohmic and Schottky contact materials selected and deposited and the design and construction of a new MBE/ALE system virtually completed. Keywords: Alpha sic, Theoretical models, MESFETs, IMPATTs, Ohmic Scottky contacts, Deposition.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1990
- Accession Number
- ADA225883
Entities
People
- John W. Palmour
- Larry Rowland
- Lisa Spellman
- R. J. Trew
- Robert F Davis
Organizations
- North Carolina State University