Pseudomorphic Semiconducting Heterostructures from Combinations of A1N, GaN an Selected SiC Polytypes: Theoretical Advancement and Its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development

Abstract

In this reporting period, studies have been conducted in three primary areas: (1) development and application of computer codes concerned with pseudomorphic structures (specifically the cBN-diamond system), the growth of GaN/AIN pseudomorphic heterostructures and the design and fabrication of a growth system for the deposition of SiC/AlN/GaN pseudomorphic structures. Low index planes ((111), (110), (100) and (221)) have been shown to be geometrically favorable for the growth of cBN on diamond. For the first time, pseudomorphic heterostructures between GaN and AlN have been achieved and characterized. An MBE/ALE system has been designed and is under construction for the deposition of AlN/GaN/SiC pseudomorphic heterostructures.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1990
Accession Number
ADA225893

Entities

People

  • Larry Rowland
  • Max W. Braun
  • Robert F Davis
  • Zlatko Sitar

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Analysis
  • Chemistry
  • Construction
  • Crystallography
  • Crystals
  • Energy Bands
  • Epitaxial Growth
  • Hypervelocity Flow
  • Mass Spectrometry
  • Materials
  • Materials Processing
  • Materials Science
  • Mechanical Properties
  • Silicon Carbide
  • Solid State Physics
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.