Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN
Abstract
In the research of this reporting period, A1N films and A1N/GaN layered structures have been grown and structurally, chemically and optically characterized. In addition, BN has been similarly deposited on cubic Beta-SiC and diamond substrates. Strained layer superlattices have been fabricated for the first time between GaN and A1N. The energy offset was up to 260 meV for the superlattices with the thinnest barriers. Cubic BN was deposited on the aforementioned substrates; however, significant carbon was also present. The latter problem has now been resolved. Keywords: Aluminum nitride, Boron nitride, Layered structures, Transmission electron microscopy, Photoluminescence, Electron cyclotron, Resonance plasma source.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1990
- Accession Number
- ADA225894
Entities
People
- Michael J. Paisley
- Robert F Davis
- Zlatko Sitar
Organizations
- North Carolina State University