Spectroscopic Studies of GaAs/AlGaAs Superlattices under Hydrostatic and Uniaxial Pressures at 8 to 300K
Abstract
We report on our spectroscopy investigations of bulk semiconductors and quantum well heterostructures under hydrostatic pressures at low temperatures (5 to 300K). We have studied several semiconducting materials: bulk AlGaAs, GaAs/AlGaAs quantum well heterostructures (QWH), GaSb/AlSb QWH, and the II-VI alloys, CdMnTe. The motivating factor in all the studies was to use pressure as a tool to uncover fundamental properties of the materials that were directly of value in the design of devices. In order to conduct these studies we have become, to our knowledge, the only group in the world that conducts photoreflectance measurements under pressure in a diamond anvil cell. We are also known for our photoluminescence study at low temperatures and high pressures. In the GaAs/AlGaAs QWH we made a direct measurement of the valence band offset via an elegant pressure measurement, settling a controversy that was ten years old when we reported it in 1986. The VB offset is the single most important quantity that determines the design of GaAs/AlGaAs devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1990
- Accession Number
- ADA225925
Entities
People
- Meera Chandrasekhar