Rapid Isothermal Processing of the Thin Epitaxial CaF2 Dielectric Films for Advanced Si Radiation Tolerant Integrated Circuits

Abstract

This report contains research results in the areas of in-situ rapid isothermal processing, in-situ cleaning of semiconductor surfaces, solid phase epitaxial growth of II-A fluorides, in-situ metallization, the role of thermal stress, use of II-A fluorides as buffer layers for the decomposition of high temperature superconducting thin films and the set up of RIP assisted MOCVD. Keywords: Dielectric films, Integrated circuits, Isothermal processing, Semiconductors, fluorides, Metallization, Thermal stress, Superconducting thin films.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1990
Accession Number
ADA225995

Entities

People

  • Rajendra Singh

Organizations

  • University of Oklahoma

Tags

DTIC Thesaurus Topics

  • Circuits
  • Compound Semiconductors
  • Dielectric Films
  • Electrical Engineering
  • Electronics
  • Engineering
  • Epitaxial Growth
  • Films
  • Fluorides
  • High Temperature
  • Integrated Circuits
  • Materials
  • Oklahoma
  • Semiconductors
  • Solid Phases
  • Thermal Stresses
  • Thin Films

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene