High Temperature Superconductivity

Abstract

The overall goals of this program are to develop the technology of MBE growth of HTSC material, to optimize the performance of HTSC films with high transition temperatures and critical current densities, and to explore the development of electronic devices based on such material. The recently developed MBE system is functioning well and superconducting films with TcS' above 77K are now routinely being grown, in-situ, by atomic layer epitaxy on both MgO and SrTiO3. Work is continuing on understanding such issues as required stoichiometric control and methods of improving kinetic control precision, oxidation capacities of reactive oxygen sources, and the effect of crystallographic quality on superconducting properties. Work has continued on studying the growth of layered superconductors using atomically-layered epitaxy. An incremental improvement in the measured transition temperature was obtained, from 84 to 86K. This was from a nominal 2223-phase film.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1990
Accession Number
ADA226298

Entities

People

  • James N. Eckstein

Tags

DTIC Thesaurus Topics

  • Atomic Layer Epitaxy
  • Crystal Lattices
  • Crystals
  • Current Density
  • Diffraction
  • Diffraction Analysis
  • Epitaxial Growth
  • Films
  • High Temperature
  • Low Angles
  • Materials
  • Single Crystals
  • Superlattices
  • Transition Temperature
  • Transitions
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Physics

Readers

  • Superconducting Magnet Technology
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene