Thin Crystalline InP on Insulating Substrates

Abstract

This program has successfully developed device quality InP films on insulating substrates. A low cost deposition technique was established which produced mechanically stable, stoichiometric InP films on insulating substrates. The substrate has a thermal expansion coefficient matched to InP for temperatures up to 600 C. Device quality was established by the fabrication and successful operation of Schottky barrier diodes. Device performance comparisons of these devices with identical structures on large grain commercial polycrystalline InP material and LEC single crystal InP material provided a relative basis for analysis of material quality. Device performance was found to be dependent on the grain size of the InP films. The quality of the InP/Glass photodiodes fabricated and tested during this program indicate the high device potential of these films for grain sizes exceeding 10 microns. Larger grain InP films are needed to provide more conclusive findings on the optimum grain size for device applications.

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Document Details

Document Type
Technical Report
Publication Date
May 14, 1990
Accession Number
ADA226386

Entities

People

  • Allen M. Barnett
  • James B. Mcneely
  • Sandra R. Collins

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Coatings
  • Crystals
  • Electrical Properties
  • Electron Beams
  • Field Effect Transistors
  • Films
  • Grain Boundaries
  • Grain Size
  • Materials
  • Mobility
  • Photodetectors
  • Photodiodes
  • Schottky Diodes
  • Semiconductors
  • Single Crystals
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene