Growth, Physical Properties, and Device Characteristics of Hg(1-x)Mn(x) Te and Hg(1-x-y)Cd(y)Mn(x)Te Epilayers

Abstract

The original aims of this research program were: (1) To develop techniques for reproducible growth of device quality HG(1-x)Mn(x) and Hg(1-x-y) Cd(y)Mn(x)Te epitaxial layers with controlled carrier concentration and alloy composition in the range 0<x<0.2, and (2) To measure transport, optical, and other physical properties of the samples grown.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1988
Accession Number
ADA226507

Entities

People

  • P. A. Wolff

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Growth
  • Crystals
  • Current Density
  • Electronics Laboratories
  • Epitaxial Growth
  • Laser Diodes
  • Lasers
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Magnetic Resonance
  • Nuclear Magnetic Resonance
  • Optical Properties
  • Phase
  • Physical Properties
  • Semiconductor Lasers
  • Semiconductors
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology