FTIR Studies of H2O and D2O Decomposition on Porous Silicon Surfaces

Abstract

The decomposition of H2O and D2O on silicon surfaces was studied using transmission Fourier-Transform Infrared (FTIR) spectroscopy. These FTIR studies were performed in-situ in an ultra-high vacuum chamber using high chamber area porous silicon samples. The FTIR spectra revealed that H2O (D02) initially dissociates upon adsorption at 300 K to form SiH (SiD) and SiOH (SiOD) surface species. The decomposition of these surface species was then monitored. As the silicon surface was annealed to 650 K, the FTIR spectra revealed that the SiOH surface species progressively decomposed to Si-O-Si species and additional SiH species. Above 650 K, the SiH surface species decreased concurrently with the desorption of H2 from the porous silicon surface. Chemical reactions.

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1990
Accession Number
ADA226581

Entities

People

  • A. C. Dillon
  • A. S. Bracker
  • Paridhi Gupta
  • S. M. George

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Chemical Reactions
  • Chemistry
  • Classification
  • Decomposition
  • Desorption
  • Dissociation
  • Electrons
  • High Vacuum
  • Infrared Spectra
  • Materials
  • Military Research
  • Oxidation
  • Spectra
  • Spectroscopy
  • Surface Reactions
  • Vacuum Chambers

Fields of Study

  • Environmental science
  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Thin Film Deposition Science.