Signal Processing Development
Abstract
This electron microscope has been applied to the study of the growth of thin epitaxial films on silicon substrates. The study of the nature of platinum-silicide films formed by heating evaporated platinum films on these substrates is discussed. The use of ultra high vacuum systems together with a residual gas analyzer (RGA) is discussed as they relate to the preparation of silicides, a dielectric layer of silicon monoxide is evaporated and an ion beam implanter is used to form a special buried layer as a step toward silicon devices. Synthesis and single crystal growth of indium phosphide in a one-step in-situ process at high ambient pressures is discussed. Analysis of heat transfer by convection, conduction, and radiation in a closed pressure vessel is given. A set of source modules and NOS procedures have been prepared to permit easy access to a 3-dimensional, non-isotrophic ray-tracing program (the Jones - Stephenson program). This system is designed to be run on a CDC CYBER computer system or equivalent using the operating system.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1989
- Accession Number
- ADA226593
Entities
People
- C. Comer
- J. Bloom
- J. Caulfield
- R. A. Marshall
- T. B. Barrett