Kinetics of Semiconductor Processing Chemistry: SiGe and GaAs Growth on Silicon Surfaces

Abstract

This symposia included the following topics: Laser Induced Desorption of H2 from Si(111)7x7; FTIR Studies of H2O and D2O Decomposition on Porous Silicon Surfaces ; Ammonia Decomposition on Silicon Surfaces Studied Using Transmission FTIR Spectroscopy; FTIR Studies Reveal that Silicon-Containing Laser-Induced Desorption Products are Surface Reaction Intermediates. (JS)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1990
Accession Number
ADA226639

Entities

People

  • Steven M. George

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Chemical Kinetics
  • Chemical Reactions
  • Chemistry
  • Decomposition
  • Desorption
  • Electronics
  • Elimination Reactions
  • Epitaxial Growth
  • Germanium
  • Germanium Compounds
  • Kinetics
  • Laser Science
  • Materials
  • Materials Science
  • Semiconductors
  • Surface Chemistry
  • Surface Reactions

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics