Heavy-Ion-Induced Snapback in CMOS Devices
Abstract
Single-event snapback (SES) susceptibilities of selected complementary metal-oxide semiconductor (CMOS) devices to heavy ions were measured, first using N, NE, Ar, Cu and Kr ion beams. Like latchup, snapback was observed macroscopically by detecting the abnormally high bias current condition. However, the snapback susceptibility characteristics differed from those of latchup, and consequently we could unambiguously measure the snapback responses. The responses are expressed in terms of the cross section for varying bias and the stopping power of ions. Test data indicate that CMOS devices with rather long channel lengths (on the order of 3 um) are free from SES when operated about 5 V. However, present-day theories have predicted that this regenerative breakdown mode of upset may become very important at 5 V below for devices with extremely short n-channel lengths.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 15, 1990
- Accession Number
- ADA226765
Entities
People
- Rokutaro Koga
- Wojciech A. Kolasinski
Organizations
- The Aerospace Corporation