Investigation of New SemiInsulating Behavior of III-V Compounds

Abstract

Study of transition metal impurities have defined direct effects associated with deep donor/acceptor levels acting as compensating centers. Electrical and optical properties of vanadium and titanium levels were determined in GaAs. The experimental data provided basis for the verification of chemical trends and defined compositional range for III-V mixed crystals whereby semiinsulating behavior can be achieved using transition elements deep levels and a suitable codoping with shallow donor/acceptor impurities.

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Document Details

Document Type
Technical Report
Publication Date
Feb 28, 1990
Accession Number
ADA226787

Entities

People

  • Jacek Lagowski

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Chemical Reactions
  • Crystal Growth
  • Crystallography
  • Crystals
  • Energy Bands
  • Fermi Levels
  • Materials
  • Materials Engineering
  • Materials Science
  • Optical Properties
  • Photoexcitation
  • Semiconductors
  • Solid State Physics
  • Spectra
  • Transition Metals
  • Transitions

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology