Pseudomorphic InGaAs Materials
Abstract
The objective of this program is to evaluate the dependence of pseudomorphic InxGa1-xAs quality on epitaxial growth conditions and InxGa1-xAs composition. All of the structures were fabricated by molecular beam epitaxy (MBE). The effects of different growth conditions were evaluated with a combination of characterization techniques, including Hall effect, Shubnikov-de Hass, photoreflectance, microwave reflectance, photoluminescence, transmission electron microscopy (TEM), and in-situ reflection high energy electron diffraction (RHEED). Critical layer thickness is shown to be a function of MBE growth temperature. Also, the interruption of InXGa1-xAs growth with a few monolayers of GaAs is shown to smoothen the InxGa1-xAs surface to provide strain relief, substantially extending the critical layer thickness. Modulation enhanced epitaxy is demonstrated to yield high quality pseudomorphic structures at temperatures as low as 300 C. Extensive materials characterization and modeling were applied to the structures, and excellent agreement was often obtained without resorting to adjustable parameters. Keywords: Epitaxy, Pseudomorphic heterostructures, Stained layer superlattices, Dislocations, Photoluminescence, Hall effect, Electron diffraction, Photoreflectance.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1990
- Accession Number
- ADA226895
Entities
People
- J. M. Ballingall
- P. Ho
- Paige Martin
- Yu Tian