Crystal Structure of ZnGa2S4, a Defect Sphalerite-Derivative

Abstract

ZnGa2S4 crystallizes in the defect stannite structure which is related to sphalerite. Refinement of different models of cation distribution gave R values of 0.041 to 0.043 for 360 independent reflections. Of the models considered, the ordered model with Zn only at point set 2a and Ga only at point set at 4d was found to be worse, statistically, than models with some degree of cation disorder. Models with cation disorder are consistent with a previous review in which is was suggested that the displacement of the anion from the ideal (1/4, 1/4, 1/8) was insufficient in ZnGa2S4 to indicate cation ordering. Disorder amongst the cation sites is also consistent with reported Raman and photoluminescence results. The slight difference observed between the metal- sulfur bond lengths for the two crystallographic cation sites attributed to the differing effect of the vacancy on these sites rather than to cation ordering. Keywords: Crystal structure, Ternary sulfides, Zinc gallium sulfide.

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Document Details

Document Type
Technical Report
Publication Date
Sep 05, 1990
Accession Number
ADA226937

Entities

People

  • Charlotte K. Lowe-ma
  • Terrell A. Vanderah

Organizations

  • Naval Air Weapons Station China Lake

Tags

Communities of Interest

  • Air Platforms
  • Weapons Technologies

DTIC Thesaurus Topics

  • Chemistry
  • Crystal Chemistry
  • Crystal Structure
  • Crystallography
  • Crystals
  • Diffraction
  • Displacement
  • Distortion
  • Military Research
  • Optical Materials
  • Phase
  • Phase Diagrams
  • Photoluminescence
  • Reflection
  • Scattering
  • Single Crystals
  • X Rays

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene