Use of D2 to Elucidate OMVPE Growth Mechanisms

Abstract

This research project has successfully determined the reaction mechanisms for the pyrolysis of the group III precursors trimethylgallium (TMGa) and trimethylindium (TMIn) and the grup V precursors AsH3. PH3, trimethylarsine (TMAs), dimethylarsin (DMAs), triethylarsin (TEAs), diethylarsine DEAs), monoethylarsine (MEAs), tertiarybutylarsin (TBAs), and tertiarybutylophospine (TBP). The reaction mechanisms have also been studied for combinations of the group III and group V precursors which result in the production of GaAs and InP. The technique used is mass spectrometry with the pyrolysis occurring in various ambients including H2, He, and D2. The latter allows labelling of reaction mechanisms observed are surprisingly diverse. The pyrolysis temperatures for the various As precursors can be compared. Keywords: Chemical reactions.

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Document Details

Document Type
Technical Report
Publication Date
Jul 11, 1990
Accession Number
ADA226966

Entities

People

  • G. B. Stringfellow

Organizations

  • University of Utah

Tags

DTIC Thesaurus Topics

  • Barometric Pressure
  • Chemical Reactions
  • Chemistry
  • Crystal Growth
  • Decomposition
  • Electronic Materials
  • Elimination Reactions
  • Engineering
  • Low Temperature
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Pyrolysis
  • Reaction Mechanisms
  • Vapor Phases

Readers

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  • Organic Chemistry
  • Semiconductor Device Technology