Growth, Characterization and Device Development in Monocrystalline Diamond Films

Abstract

In this reporting period, diamond films have been deposited on various polycrystalline metal and (001) Si substrates by biased hot filament chemical vapor deposition, the films characterized by TEM, x-ray diffraction and Raman and Auger spectroscopies and devices (specifically IMATTs and MESFETs) modeled from the properties of diamond. Films grown on Si, Ni and W exhibited the highest quality diamond films from the viewpoint of Raman characterization. The model of the MESFET device with gate length = 1 micron and width = 1 mm showed that significant degradation in RF performance is not expected at 10 GHz. Keywords: Diamond thin films, Chemical vapor deposition, Raman spectroscopy, Electronic devices.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1990
Accession Number
ADA227238

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Chemistry
  • Crystal Lattices
  • Crystallography
  • Crystals
  • Epitaxial Growth
  • High Pressure
  • Materials
  • Materials Science
  • Raman Spectroscopy
  • Silicon Carbide
  • Solid State Physics
  • Spectra
  • Three Dimensional
  • Two Dimensional
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene