Quantum Well Laser

Abstract

During the first year of the program, basic materials growth experiments were carried out in order to develop the necessary capability of the growth of quantum well lasers by Atmospheric Pressure MOVPE (AP-MOVPE). In the latter part of the program, this technology was transferred to a Low Pressure MOVPE (LP-MOVPE) reactor which demonstrated superior materials and interface qualities with respect to structures prepared by AP-MOVPE. By correlating SIMS data and Hall analysis, conditions were determined for the growth of high quality and abrupt p-doped and n-doped InP of known carrier concentration. In this way p-doped InP over the range mid 10 to the 17th power /cc to 2 x 10 to the 18th power/cc could be grown, with carrier concentrations extended up to 10 to the 19th power/cc for p++ InGaAs contact layers. Quantum well laser structures were grown and tested. Keywords: Quantum well, Indium phosphide heterostructures.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1990
Accession Number
ADA227303

Entities

People

  • A. C. Marshall
  • D. J. Robbins
  • P. J. Williams

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Barometric Pressure
  • Distributed Feedback Lasers
  • Heterojunctions
  • Laser Applications
  • Laser Beams
  • Laser Diodes
  • Lasers
  • Materials
  • Measurement
  • Optical Properties
  • Optics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing