Development and Testing of Radiation and Electromagnetic Pulse Hardened Silicon Carbide Based Electronics

Abstract

There were three primary objectives. The first was the reverse avalanche testing of diodes exhibiting (a) microplasma dominated breakdown, (b) a combination of microplasma and bulk avalanche breakdown and (c) bulk avalanche breakdown only. These glass encapsulated devices were tested at approximately 1 us, approximately 10 us and 100 us pulses. The second objective was to fabricate and characterize Shockley diodes in chip form showing proper breakdown in forward and reverse bias and a forward bias turn-on of approximately 2.6 V. The third objective was to fabricate and characterize 6H-SiC JFET structures in chip form. Keywords: Avalanche diodes; Junction diodes; Field effect transistors.

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Document Details

Document Type
Technical Report
Publication Date
Sep 19, 1990
Accession Number
ADA227309

Entities

People

  • J. A. Edmond
  • J. W. Palmour

Organizations

  • Wolfspeed

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Gaps
  • Ceramic Materials
  • Circuits
  • Diodes
  • Electromagnetic Pulses
  • Electronics
  • Fabrication
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Metal-Semiconductor Junctions
  • P-N Junctions
  • Power Electronics
  • Radiation
  • Semiconductors
  • Silicon Carbide
  • Thickness
  • Voltage

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics