Two-Dimensional Simulation of Quantum-Well Lasers Including Energy Transport
Abstract
A versatile, two-dimensional simulator for various types of semiconductor lasers for both steady state and transients has been developed. The simulator is capable of spectral analysis of quantum-well semiconductor lasers, such as gain-spectrum analysis, as well as analysis of the two dimensional current flow and optical intensity patterns. The simulator is based on the drift-diffusion model with full Fermi Dirac statistics for the transport equations as well as for the Pisson equation. Simulation of the thermionic emission current is required at the abrupt hetero-interfaces of the quantum well. Energy transfer among the change carriers, crystal lattice, and optical radiation in an optoelectronic semiconductor device is analyzed in order to obtain details of the internal temperature distribution. Fermi Dirac statistics and the spatial band-gap variation in a degenerate semiconductor device with nonuniform band structure are included in the analysis. The boundary conditions for the energy flow equation are discussed. The photon rate equation is used for the spectral analysis of quantum-well lasers for each Fabry-Perot mode. The transient simulation is done by the backward-Euler method in conjunction with the full Newton approach for the entire semiconductor equations. To demonstrate the simulator, a model GaAs-AlGaAs graded-index-separate-confinement- heterostructure buried-quantum-well laser is analyzed. Theses.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1990
- Accession Number
- ADA227487
Entities
People
- Ghie H. Song
Organizations
- University of Illinois Urbana–Champaign