Total Dielectric Isolation (TDI) of Fully Depleted Device Structures
Abstract
The aim of this program is to prepare, evaluate and optimise Total Dielectric Isolated (TDI) structures in order to develop the technology for the preparation of substrates for circuits which exhibit improved radiation tolerance. Successful experiments include the preparation of device worthy substrates in variously patterned wafers, identification of the microstructure of TDI wafers by cross-sectional transmission electron microscopy (XTEM) and the successful implementation of a new predictive software package (IRIS). In addition a new halogen lamp heated wafer holder (funded under another contract) has been commissioned and used to prepare substrates with pre-heating and background heating up to 680 degrees C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1990
- Accession Number
- ADA227994
Entities
People
- Peter L. Hemment
Organizations
- University of Surrey