Semiconductor Diamond Technology
Abstract
Semiconducting diamond technology development this quarter has focused on: (1) metal substrate development by the formation of ultra-thin refractory metal layers on Ni(100) surfaces, (2) advancement toward ALE by obtaining absorption/desorption data from Si(100) surfaces fro hydrogen and halogen species in the surface chemistry facility, (3) continuing development of low pressure rf-plasma assisted diamond CVD for diamond device fabrication. A diamond FET fabrication sequence that utilizes selective area epitaxy of doped diamond on an insulating diamond single crystal substrate is proposed. This process sequence takes advantage of (1) well-established lithography and etching processes for mask materials, (2) the fact that diamond is difficult to nucleate on most materials that could be used as a masking layer, and (3) the established capability of depositing gate-quality dielectrics by RPECVD. Selective area diamond homoepitaxy has been demonstrated through lithographically defined windows in Si and Ni masking layers. Additionally, diamond is observed to overgrow (epitaxially and laterally) the Si masking layer at approximately the same rate as the vertical epitaxy. (rh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1990
- Accession Number
- ADA228607
Entities
People
- John B. Posthill
- R. E. Thomas
- Robert J. Markunas
- Ronald A. Rudder
Organizations
- RTI International