Integrated Semiconductor Modulators
Abstract
Studies have shown that impurity induced layer disordering can be used to fabricate buried channel optical waveguides from the same heterostructure as is used for lasers and the routing properties of these waveguides are exceeded only by those fabricated by non-planar techniques. The importance of these is that of providing an existence-proof for this technology for other than straight waveguides. It has been demonstrated that, by using vacancy induced disordering, the band gap can be selectively increased thus rendering a heterostructure transparent to radiation at it's native band gap without any loss in waveguide routing ability. This provides a means for integrating lasers, amplifiers, modulators, detectors and passive waveguides from the same wafer without severe band edge attenuation. It has also been demonstrated that a single quantum well graded barrier laser heterostructure has a significant electroabsorption tail which can be used for a modulator or detector. (RH)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1990
- Accession Number
- ADA228615
Entities
People
- Thomas A. Detemple
Organizations
- University of Illinois Urbana–Champaign