Research and Development on Advanced Silicon Carbide Thin Film Growth Techniques and Fabrication of High Power and Microwave Frequency Silicon Carbide-Based Device

Abstract

The RF operation of bipolar transistors fabricated from alpha-(6H)SiC by Cree Research investigated and improved from the standpoints of parasitic resistances and capacitances as well as device design and fabrication procedures. In addition IMPATT diode structures have been further developed, ohmic and Schottky contact materials selected and deposited and the design and construction of a new MBE/ALE system virtually completed. Keywords: Impatt diodes; Bipolar transistors; Silicon carbides; Thin films.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1990
Accession Number
ADA228758

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Analysis
  • Chemistry
  • Electron Mobility
  • Epitaxial Growth
  • Field Effect Transistors
  • High Temperature
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Metal-Semiconductor Junctions
  • Microwave Frequency
  • Semiconductors
  • Silicon Carbide
  • Spectra
  • Spectroscopy
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Software Engineering