Pseudomorphic Narrow Gap Materials for High Performance Devices

Abstract

Kink-free AIInAs/GaInAs/InP modulation-doped field effect transistors from materials grown under normal molecular beam epitaxy conditions and high transconductance P-channel GaSb MODFET with very low gate leakage currents for complementary circuit applications have been developed. A hot electron bipolar transistor (Auger transistor) has been studied theoretically to show that a substantial improvement over conventional HBTs due to the reduced base resistance. We have also demonstrated theoretically that dominant Auger process in InGaSb/A1GaSb strained quantum well structures can be suppressed. (TTL)

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Document Details

Document Type
Technical Report
Publication Date
Nov 02, 1990
Accession Number
ADA228828

Entities

People

  • Wen I. Wang

Organizations

  • Columbia University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Bipolar Junction Transistors
  • Electrical Engineering
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Frequency
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • New York
  • Power Electronics
  • Quantum Wells
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing