Multiple Optical Probing of High Frequency Semiconductor Devices
Abstract
The purchase was made of a complete Nd: YAG pumped picosecond dye laser and related optical components. Matching support was provided for an autocorrelator, power meters, lock-in detectors and Optical Table to form a complete measurement system. The idea was to fabricate a picosecond system which would measure devices and systems out to at least 200 GHz. It would be used to validate Network analyzer measurements in the region of overlap and to develop a degree of confidence in the entire technique of S parameter measurement using picosecond pulses. The highest frequency GaAs and GaAs alloy devices were investigated. New types of devices, MMIC amplifiers and finally the operational constraints of optical interconnections were studied. The system proved to be so useful that we actually performed to be so useful that we actually performed all of these tests and have extended these measurements to the generation of millimeter radiation and the demonstration of spectroscopic use. Current measurements are on ballistic field effect devices and resonant tunneling structures which have been fabricated by local industries and universities directly as a result of this unique measurement capability. (rh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 14, 1989
- Accession Number
- ADA228842
Entities
People
- Harold Fetterman
Organizations
- University of California, Los Angeles