Physics and Technology of III-V Pseudomorphic Structures

Abstract

AlGaAs/InGaAs modulation-doped field-effect transistors with a nominally (InAs)2(GaAs)2 channel grown by migration-enhanced epitaxy exhibit better luminescent and device properties than those with a random alloy In(0.4) Ga(0.6)As channel grown by molecular-beam epitaxy (MBE). We have proposed and applied a new kinetic model, which includes both group-III alkyl and group-V species in the surface chemical reactions, to the growth of GaAs, GaSb, and InAs by metalorganic MBE or chemical-beam epitaxy (CBE). We have also set up a gas- source MBE system with elemental group-III and doping sources as well as arsine and phosphine. We used the group-V-limited growth mode to determine in situ the exact values of V/III atomic ratios during growth of GaP, InP, AlP, and GaAs. X- ray studies of an InAlAs/InP superlattice indicates the existence of a P/As- intermixed, strained interface.

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Document Details

Document Type
Technical Report
Publication Date
Nov 15, 1990
Accession Number
ADA229275

Entities

People

  • B. W. Liang
  • C. W. Tu
  • Jinlun Zhang

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Arsenic
  • Chemical Reactions
  • Crystal Growth
  • Crystal Lattices
  • Crystals
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • High Electron Mobility Transistors
  • Ionization
  • Mass Spectrometry
  • Measurement
  • Modules (Electronics)
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology