Escape Time from a Biased Asymmetric Double Quantum Well

Abstract

The escape time from the quasibound states of an asymmetrical structure consisting of a narrow well and a wide well separated by a relatively thick barrier under bias has been calculated. As expected, a monotonic decrease in the escape time from the ground state of the wide well as a function of applied voltage has been found. However, the variation of the escape times from the ground state of the narrow well and the first-excited state of the wide well versus applied voltage form a minimum at a common point. This is the signature of resonant tunneling when these two states almost coincide. (jhd)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1990
Accession Number
ADA229289

Entities

People

  • Lakshmi N. Pandey
  • Thomas F. George

Organizations

  • University at Buffalo

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Chemistry
  • Classification
  • Eigenvectors
  • Electric Fields
  • Electrons
  • Energy Bands
  • Ground State
  • Materials
  • Military Research
  • New York
  • Physical Properties
  • Physics
  • Quantum Wells
  • Security
  • United States
  • Universities

Fields of Study

  • Materials science

Readers

  • Control Systems Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots